डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
H7N1002AB | Silicon N Channel MOS FET High Speed Power Switching H7N1002AB
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0130-0200Z Rev.2.00 Oct.30.2003
www.DataSheet4U.com
Features
• Low on-resistance RDS(on) = 8 mΩ typ. • Low drive current • Available |
Renesas Technology |
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H7N1002AB | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |