H5N5016PL डाटा शीट PDF( Datasheet )

H5N5016PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0175-0200Z Rev.2.00 Jul.02.2004 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High speed switching • Buil

H5N5016PL-E0-E 500V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.108 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching �