H5N5005PL डाटा शीट PDF( Datasheet )

H5N5005PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1382 (Z) Target Specification 1st. Edition Mar. 2001 Features • • • • • • Low on-resistance: R DS(on) = 0.064 typ. Low leakag

H5N5005PL Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: RDS(on) = 0.070 Ω typ. • Low leakage current: IDSS = 10 µA max (at VDS = 500 V) • High speed switching: tf