डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
H5N2522FP-E0-E | High Speed Power Switching MOS FET H5N2522FP-E0-E
250V - 12A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.13 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
Low leakage current High speed switching |
Renesas Technology |
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H5N2522FP-E0-E | High Speed Power Switching MOS FET | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |