H5N2509P डाटा शीट PDF( Datasheet )

H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 (Z) Target Specification 1st. Edition Mar. 2001 Features • Low on-resistance : RDS(on) = 0.053 Ω typ. • Low leakage current :

H5N2509P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: R DS (on) = 0.053 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) • High speed swi