डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
H5N2507P | High Speed Power Switching MOSFET H5N2507P
250V - 50A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.04 typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)
Low leakage current High speed switching Low gat |
Renesas Technology |
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H5N2507P | High Speed Power Switching MOSFET | Renesas Technology |
www.DataSheet.in | 2017 | संपर्क |