EPC20 डाटा शीट PDF( Datasheet )

68 Product Specifications (Mn-Zn Ferrite) Type : EPC Cores Ordering Code: P4 EPC19 G Material Core Size Gapped AL Value Shape: Type:1 Type:2 DIMENSIONS CORES EPC10 EPC10A EPC12.6 EPC13 EPC13A EPC13C EP

eGaN® FET DATASHEET EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 7 mW ID , 25 A NEW PRODUCT EPC2001 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and pr

eGaN® FET DATASHEET EPC2001C – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 7 mΩ ID , 36 A D G S EPC2001C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobil

eGaN® FET DATASHEET EPC2007 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 30 mW ID , 6 A NEW PRODUCT EPC2007 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and pr

eGaN® FET DATASHEET EPC2010 – Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 25 mW ID , 12 A NEW PRODUCT EPC2010 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and p

eGaN® FET DATASHEET EPC2010C EPC2010C – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 25 mΩ ID , 22 A D G S EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mob

eGaN® FET DATASHEET EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 100 mW ID , 3 A NEW PRODUCT EPC2012 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and p