डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
DSR01S30SC | Silicon Epitaxial Schottky Barrier Type Diode DSR01S30SC
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSR01S30SC
○ High-Speed Switching Application
Unit: mm
0.1 9±0.02
Absolute Maximum Ratings (Ta = 25°C)
2
0.025±0.015
0.62 ±0.03 0. |
Toshiba Semiconductor |
|
DSR01S30SC | Silicon Epitaxial Schottky Barrier Type Diode | Toshiba Semiconductor |
|
DSR01S30SL | Schottky Barrier Diode | Toshiba |
www.DataSheet.in | 2017 | संपर्क |