DP3 डाटा शीट PDF( Datasheet )

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DP3090 Trench N-MOSFET 30V, 3.2mΩ, 90A Features • Uses advanced Trench MOS technology • Extremely low on-resistance RDS(on) RDS(on) typ. • Excellent QgxRDS(on) product(FOM) • Qualified according to J

E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom design • Flexible pin configuration, max.

E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom design • Flexible pin configuration, max.

E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom design • Flexible pin configuration, max.

E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom design • Flexible pin configuration, max.