DMN90H8D5HCT डाटा शीट PDF( Datasheet )

NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATE PART DMN90H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 900V RDS(ON) 7Ω@VGS = 10V Package TO220AB (Type TH) ID TC = +25°C 2.5A Description

isc N-Channel MOSFET Transistor DMN90H8D5HCT FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.0Ω(Max) ·100% avalanch

OBSOLETE – PART DISCONTINUED PART OBSOLETE - CONTACT US DMN90H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 900V RDS(ON) 7Ω@VGS = 10V ID TC = +25°C 2.5A Description This new genera

isc N-Channel MOSFET Transistor DMN90H8D5HCTI FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.0Ω(Max) ·100% avalanc