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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
DMN63D8L | N-CHANNEL MOSFET NEW PRNOEDWUCPTRODUCT
Product Summary
V(BR)DSS 30V
RDS(ON) max
2.8Ω @ VGS = 10V 3.8Ω @ VGS = 5V
ID max TA = +25°C
350mA
300mA
Description
This MOSFET is designed to minimize the on-state resistance (R |
Diodes |
|
DMN63D8LDW | Dual N-Channel MOSFET NEW PRODUCT
Product Summary
BVDSS 30V
RDS(ON)
4.2Ω @ VGS = 4.5V 2.8Ω @ VGS = 10V
ID TA = +25°C
200mA 260mA
Description
This new generation MOSFET has been designed to minimize the on-state resistance |
Diodes Incorporated |
|
DMN63D8LV | Dual N-Channel MOSFET NEW PRODUCT
Product Summary
V(BR)DSS 30V
RDS(ON)
4.2Ω @ VGS = 5V 2.8Ω @ VGS = 10V
ID TA = 25°C
200mA
260mA
Description
This new generation MOSFET has been designed to minimize the on-state resistance |
Diodes |
|
DMN63D8LW | N-CHANNEL MOSFET NEW PRNOEDWUCPTRODUCT
Product Summary
V(BR)DSS 30V
RDS(ON) max
2.8Ω @ VGS = 10V 3.8Ω @ VGS = 5V
ID max TA = +25°C
380mA
330mA
Description
This MOSFET is designed to minimize the on-state resistance (R |
Diodes |
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