DMG9N65CT डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) ·100% avalanche tested ·Minim

OBSOLETE – PART DISCONTINUED PART OBSOLETE - Use DMG7N65SCT Green DMG9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 650V RDS(ON) MAX 1.3Ω @ VGS = 10V Package TO220AB ID MAX TC = +25°

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) ·100% avalanche tested ·Minim

Product Summary V(BR)DSS 650V RDS(ON) 1.3Ω @ VGS = 10V Package ITO-220AB ID TC = +25°C 9.0A Description This new generation complementary dual MOSFET features low on-resistance and fast switching, making