डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
DMG4N60SJ3 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2.5Ω(Max) ·100% avalanche tested ·Minim |
INCHANGE |
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DMG4N60SJ3 | N-Channel MOSFET NEW PRODUCT
DMG4N60SJ3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS (@ TJ Max) 650V
RDS(ON) Max 2.5 @ VGS = 10V
ID TC = +25°C
3.0A
Description and Applications
This new generation MOSFET ha |
Diodes |
www.DataSheet.in | 2017 | संपर्क |