डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
D2012 | NPN Silicon Power Transistor ®
2SD2012
NPN SILICON POWER TRANSISTOR
s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY
MOUNTING
APPLICATIONS s GENERAL PURPOSE POWER AMPLIFIERS s GENERAL PURPOSE SWITCHING
DESCR |
STMicroelectronics |
|
D2012 | Si NPN Transistor www.DataSheet4U.com
YOUDA TRANSISTOR
Si NPN TRANSISTOR¡ª
DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity
D2012
D2012
PIN CONFIGURATIONS PIN |
Wuxi Youda Electronics |
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D2012 | 2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2012
Audio Frequency Power Amplifier Applications
2SD2012
Unit: mm
• Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High po |
Toshiba Semiconductor |
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D2012UK | METAL GATE RF SILICON FET TetraFET
D2012UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED
FEATURES
• SIMPLI |
Seme LAB |
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