D1412 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1412 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A ·Collector-Emitter Breakdown Voltage- :

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications 2SD1412A Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (max) at IC = 4 A