डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
D103 | 2SD103 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2SD103
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Power Dissipation: PC= 25W(Max)@TC=25� |
Inchange Semiconductor |
|
D1030N | Rectifier Diode N
Netz-Gleichrichterdiode Rectifier Diode
Datenblatt / Data sheet
D1030N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / maximum rated values
PerKiodeisncnhedaStpeitznensperrspan |
Infineon |
|
D1031 | METAL GATE RF SILICON FET TetraFET
D1031UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL.
2.313 ± 0.2
4 3
3.00 2.07 0.381 2 PL. 2 PL.
5
1.27
GOLD MET |
Seme LAB |
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D1031SH | Fast Hard Drive Diode Schnelle beschaltungslose Diode Fast Hard Drive Diode
Technische Information / technical information
D1031SH
Key Peanranmdaetteenrs VRRM IFAVM IFSM VT0 rT RthJC Clamping Force Max. Diameter Contact Diameter H |
Infineon |
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D1031UK | METAL GATE RF SILICON FET TetraFET
D1031UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL.
2.313 ± 0.2
4 3
3.00 2.07 0.381 2 PL. 2 PL.
5
1.27
GOLD MET |
Seme LAB |
|
D1033 | 2SD1033 |
NEC |
|
D1034UK | METAL GATE RF SILICON FET www.DataSheet4U.com
TetraFET
D1034UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B A C E (2 pls)
K
1
2
3
4
F
G
8
J Typ.
7
6
5
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz |
Seme LAB |
www.DataSheet.in | 2017 | संपर्क |