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BLV10 | VHF power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLV10 VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxia |
NXP |
|
BLV100 | UHF power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLV100 UHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
UHF power transistor
FEATURES • Internal input matching to a |
NXP |
|
BLV103 | UHF power transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BLV103 UHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
UHF power transistor
FEATURES • Internal matching for an opt |
NXP |
|
BLV108 | Vertical N-channel MOSFET www.DataSheet4U.com
BLV108
N 沟纵向 MOSFET 描述: 描述:
N 沟增强型 VDMOS,高速开关,无二次击穿
产品应用:
电话机电路 继电器电路 驱动电路等
工作条件
符号
VDSS VG |
SHANGHAI BELLING |
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