APT6030BVR डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) ·100% avalanche tested ·Minimum

APT6030BVR APT6030SVR 600V 21A 0.300Ω POWER MOS V® MOSFET BVR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, inc