APT34M60B डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=36A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.19Ω(Max) ·100% avalanche tested ·Minimu

APT34M60B APT34M60S 600V, 36A, 0.19Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and