APT11N80BC3 डाटा शीट PDF( Datasheet )

APT11N80BC3 www.DataSheet4U.com 800V 11A 0.45Ω Super Junction MOSFET C O OLMOS Power Semiconductors TO-247 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Ener

APT11N80BC3G 800V 11A 0.45Ω Super Junction MOSFET TO-247 • Ultra low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 Package D G S MAXIMUM RATINGS S

isc N-Channel MOSFET Transistor APT11N80BC3G FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) ·100% avalanche t