AOW7S60 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOW7S60 FEATURES ·Drain Current –ID=7A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) ·100% avalanche tested

AOW7S60/AOWF7S60 600V 7A α MOS TM Power Transistor General Description The AOW7S60 & AOWF7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of pe