AOTF8T50P डाटा शीट PDF( Datasheet )

AOTF8T50P 500V,8A N-Channel MOSFET General Description • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Sum

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.81Ω(Max) ·100% avalanche tested ·Minimum