डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOTF6N90 | N-Channel MOSFET isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID=6A@ TC=25℃ ·Drain Source Voltage-
: VDSS=900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =2.2Ω(Max) ·100% avalanche tested ·Minimum |
INCHANGE |
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AOTF6N90 | 6A N-Channel MOSFET AOTF6N90
900V,6A N-Channel MOSFET
General Description
Product Summary
The AOTF6N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robus |
Alpha & Omega Semiconductors |
www.DataSheet.in | 2017 | संपर्क |