AOTF42S60 डाटा शीट PDF( Datasheet )

AOTF42S60 600V 39A a MOS TM Power Transistor General Description Product Summary The AOTF42S60 has been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of pe

isc N-Channel MOSFET Transistor AOTF42S60 ·FEATURES ·Drain Current –ID= 39A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 99mΩ(Max) ·100% avalanche

isc N-Channel MOSFET Transistor AOTF42S60L ·FEATURES ·Drain Current –ID= 39A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 99mΩ(Max) ·100% avalanche