AOTF298L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOTF298L ·FEATURES ·Drain Current –ID= 33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14.5mΩ(Max) ·100% avalanche

AOT298L/AOB298L/AOTF298L 100V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100