AOT8N65 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT8N65 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.15Ω(Max) ·100% avalanche test

AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high level