AOT8N50 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT8N50 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·100% avalanche test

AOT8N50/AOTF8N50 500V, 9A N-Channel MOSFET General Description Product Summary The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high level