AOT7N60 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT7N60 FEATURES ·Drain Current –ID= 7.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.2Ω(Max) ·100% avalanche teste

AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels