AOT5N50 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT5N50 FEATURES ·Drain Current –ID= 5.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.5Ω(Max) ·100% avalanche teste

AOT5N50/AOTF5N50 500V, 5A N-Channel MOSFET General Description Product Summary The AOT5N50 & AOTF5N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high level