AOT4N60 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT4N60 FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.2Ω(Max) ·100% avalanche tested

AOT4N60/AOTF4N60/AOTF4N60L 600V,4A N-Channel MOSFET General Description Product Summary The AOT4N60 & AOTF4N60 & AOTF4N60L have been fabricated using an advanced high voltage MOSFET process that is designed