AOT462 डाटा शीट PDF( Datasheet )

www.datasheet4u.com AOT462 N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = 60V ID = 70A RDS(ON) < 18mΩ (V GS = 10V) (VGS = 10V) General Description The AOT462 uses advanced trench tech

AOT462L/AOB462L 60V N-Channel MOSFET General Description The AOT462L/AOB462L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for b

isc N-Channel MOSFET Transistor AOT462L FEATURES ·Drain Current –ID=35A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·100% avalanche tested