AOT460 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT460 FEATURES ·Drain Current –ID=85A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) ·100% avalanche tested

AOT460 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT460/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable