AOT430 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT430 FEATURES ·Drain Current –ID=80A@ TC=25℃ ·Drain Source Voltage- : VDSS=75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11.5mΩ(Max) ·100% avalanche tested

www.datasheet4u.com AOT430 N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = 75V ID = 80 A (VGS = 10V) RDS(ON) < 11.5mΩ (VGS = 10V) General Description The AOT430 uses advanced trench te