AOT424 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT424 FEATURES ·Drain Current –ID= 110A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) ·100% avalanche tested

www.DataSheet4U.com AOT424 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistanc