AOT410L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT410L ·FEATURES ·Drain Current –ID= 150A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) ·100% avalanche

AOT410L/AOB410L 100V N-Channel MOSFET SDMOS TM General Description The AOT410L/AOB410L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is