AOT3N60 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT3N60 FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.5Ω(Max) ·100% avalanche teste

www.datasheet4u.com AOT3N60 2.5A, 600V N-Channel MOSFET formerly engineering part number AOT9602 General Description The AOT3N60 has been fabricated using an advanced high voltage MOSFET process that is desig