AOT3N50 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT3N50 FEATURES ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.0Ω(Max) ·100% avalanche teste

AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high level