AOT29S50 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT29S50 FEATURES ·Drain Current –ID= 29A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.15Ω(Max) ·100% avalanche te

AOT29S50/AOB29S50/AOTF29S50 500V 29A α MOS TM Power Transistor General Description The AOT29S50 & AOB29S50 & AOTF29S50 have been fabricated using the advanced αMOSTM high voltage process that is designed to

AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 500V 29A a MOS TM Power Transistor General Description Product Summary The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have been fabricated using the advanced aMOS