AOT2910L डाटा शीट PDF( Datasheet )

AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description The AOT2910L & AOB2910L & AOTF2910L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency s

isc N-Channel MOSFET Transistor AOT2910L ·FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 24mΩ(Max) ·100% avalanche t