AOT266L डाटा शीट PDF( Datasheet )

AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description The AOT266L & AOB266L & AOTF266L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switchin

isc N-Channel MOSFET Transistor AOT266L ·FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5mΩ(Max) ·100% avalanche t