AOT1N60 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOT1N60 FEATURES ·Drain Current –ID=1.3A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.0Ω(Max) ·100% avalanche teste

AOT1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance an