AOK9N90 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOK9N90 FEATURES ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.3Ω(Max) ·100% avalanche teste

AOK9N90 900V,9A N-Channel MOSFET General Description The AOK9N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-