AOI8N25 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOI8N25 FEATURES ·Drain Current –ID= 8.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.56Ω(Max) ·100% avalanche test

AOD8N25/AOI8N25 250V,8A N-Channel MOSFET General Description Product Summary The AOD8N25 & AOI8N25 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels o