AOI4185 डाटा शीट PDF( Datasheet )

isc P-Channel MOSFET Transistor AOI4185 FEATURES ·Drain Current –ID= -40A@ TC=25℃ ·Drain Source Voltage- : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =15mΩ(Max) ·100% avalanche test

AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. With the excellent th