AOI418 डाटा शीट PDF( Datasheet )

AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resist

isc N-Channel MOSFET Transistor AOI418 ·FEATURES ·Drain Current –ID= 36A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) ·100% avalanche tes

AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent t

isc N-Channel MOSFET Transistor AOI4184 ·FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8mΩ(Max) ·100% avalanche test

isc P-Channel MOSFET Transistor AOI4185 FEATURES ·Drain Current –ID= -40A@ TC=25℃ ·Drain Source Voltage- : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =15mΩ(Max) ·100% avalanche test

AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD4185/AOI4185 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. With the excellent th