AOD496 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com AOD496 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD496 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitabl

isc N-Channel MOSFET Transistor AOD496 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤9.5mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable oper

isc N-Channel MOSFET Transistor AOD496A FEATURES ·Drain Current –ID= 57A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) ·100% avalanche tested