AOD450 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com AOD450 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This d

isc N-Channel MOSFET Transistor AOD450 FEATURES ·Drain Current –ID= 3.8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·100% avalanche test

AOD4504 200V N-Channel MOSFET General Description The AOD4504 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters

isc N-Channel MOSFET Transistor AOD4504 FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) ·100% avalanche tested