AOD442 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOD442 ·FEATURES ·Drain Current –ID= 37A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) ·100% avalanche test

AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use a

isc N-Channel MOSFET Transistor AOD442G ·FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 18mΩ(Max) ·100% avalanche tes

AOD442G 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Applications • Industrial and Motor Drive ap