AOD421 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com AOD421 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gat

isc P-Channel MOSFET Transistor AOD421 FEATURES ·Drain Current –ID= -12.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= -20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) ·100% avalanche te