AOD4189 डाटा शीट PDF( Datasheet )

AOD4189 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD4189 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent therma

isc P-Channel MOSFET Transistor AOD4189 FEATURES ·Drain Current –ID= -40A@ TC=25℃ ·Drain Source Voltage- : VDSS=-40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =22mΩ(Max) ·100% avalanche teste